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| MLN1033S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1033S is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L STUD A 45 D B FEATURES: * Class A Operation * PG = 9.0 dB at 2.0 W/1.0 GHz * OmnigoldTM Metalization System S G D C S J E F I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG JC 10 A 60 V 35 V 140 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 17 C/W DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 MINIMUM inches / mm G H K #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .640 / 16.26 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10627 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob PG IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V TC = 25 C NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 220 mA f = 1.0 GHz 10 100 5.5 VCE = 18 V POUT = 2.0 W 9.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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